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FSB660A - PNP Transistor

General Description

These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous.

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Full PDF Text Transcription for FSB660A (Reference)

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FSB660A — PNP Low Saturation Transistor September 2018 FSB660A PNP Low Saturation Transistor Description These devices are designed with high-current gain and low saturat...

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tion These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. C E B SuperSOT™-3 (SOT-23) Ordering Information Part Number FSB660A Marking 660A Package SSOT 3L Packing Method Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolu

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