Full PDF Text Transcription for FSB619 (Reference)
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FSB619. For precise diagrams, and layout, please refer to the original PDF.
FSB619 Discrete Power & Signal Technologies July 1998 FSB619 C E B SuperSOT -3 (SOT-23) TM NPN Low Saturation Transistor These devices are designed with high current gain...
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aturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB619 50 50 5 2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C.
FSB619 Datasheet
