FQU13N06L - N-Channel QFET MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQU13N06L
Manufacturer	Fairchild Semiconductor
File Size	1.44 MB
Description	N-Channel QFET MOSFET
Datasheet	FQU13N06L Datasheet
Additional preview pages of the FQU13N06L datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (T.

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Published: Apr 1, 2005 |