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FQPF9N25C - N-Channel QFET MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 8.8 A, 250 V, RDS(on) = 430 mΩ (Max. ) @ VGS = 10 V, ID = 4.4 A.
  • Low Gate Charge (Typ. 26.5 nC).
  • Low Crss (Typ. 45.5 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQPF9N25C / FQPF9N25CT — N-Channel QFET® MOSFET November 2013 FQPF9N25C / FQPF9N25CT N-Channel QFET® MOSFET 250 V, 8.8 A, 430 mΩ Features • 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A • Low Gate Charge (Typ. 26.5 nC) • Low Crss (Typ. 45.5 pF) • 100% Avalanche Tested Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.