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FQPF9N90C - N-Channel MOSFET

General Description

RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A Fast Switching Speed 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER V

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A ·Fast Switching Speed ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A ID(puls) Pulse Drain Current Ptot Total Dissipation@TC=25℃ 36 A W 30 Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.17 ℃/W FQPF9N90C isc website：www.iscsemi.