FQP19N20 - 200V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQP19N20
Manufacturer	Fairchild Semiconductor
File Size	668.32 KB
Description	200V N-Channel MOSFET
Datasheet	FQP19N20 Datasheet
Additional preview pages of the FQP19N20 datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

19.4 A, 200 V, RDS(on) = 150 mΩ (Max. ) @ VGS = 10 V, ID = 9.7 A.
Low Gate Charge (Typ. 31 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanch.

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Published: Apr 1, 2005 |