FQP19N10 - 100V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FQP19N10
Manufacturer	Fairchild (now onsemi)
File Size	591.14 KB
Description	100V N-Channel MOSFET
Datasheet	FQP19N10 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Overview

FQP19N10 August 2000 QFET FQP19N10 100V N-Channel MOSFET General.

Key Features

19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain.

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