FQP11P06 Datasheet 60V P-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQP11P06 60v p-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQP11P06
Manufacturer	Fairchild (now onsemi)
File Size	0.97 MB
Description	60V P-Channel MOSFET
Datasheet	FQP11P06 Datasheet

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.

These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Overview

FQP11P06 — P-Channel QFET® MOSFET FQP11P06 P-Channel QFET® MOSFET -60 V, -11.

Key Features

-11.4 A, -60 V, RDS(on) = 175 mΩ (Max. ) @ VGS = -10 V, ID = -5.7 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested.
175oC Maximum Junction Temperature Rating S G GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note.

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