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FQP11N50CF Datasheet 500V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the FQP11N50CF datasheet PDF. This datasheet also includes the FQPF11N50CF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FQPF11N50CF_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET July 2005 FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel.

Key Features

  • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V.
  • Low Gate Charge (typical 43 nC).
  • Low Crss (typical 20pF).
  • Fast Switching.
  • 100% Avalanche Tested www. DataSheet4U. com.
  • Improved dv/dt Capability.
  • Fast Recovery Body Diode (typical 90ns) TM.

More Datasheets from Fairchild (now onsemi)

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