FQB6N60 - 600V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQB6N60
Manufacturer	Fairchild Semiconductor
File Size	547.21 KB
Description	600V N-Channel MOSFET
Datasheet	FQB6N60 Datasheet
Additional preview pages of the FQB6N60 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

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Published: Apr 1, 2005 |