FQB6N45 - 450V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQB6N45
Manufacturer	Fairchild Semiconductor
File Size	582.12 KB
Description	450V N-Channel MOSFET
Datasheet	FQB6N45 Datasheet
Additional preview pages of the FQB6N45 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°.

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Published: Apr 1, 2005 |