FDZ372NZ - N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET
Fairchild (now onsemi)
General Description
Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A
Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A
Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A
Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A
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FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET March 2010 FDZ372NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 4.7 A, 50 mΩ Featur...
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V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 4.7 A, 50 mΩ Features General Description Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2x2 BGA Ultra-thin package: less than 0.4 mm height when mounted to PCB HBM ESD protection level > 3200V (Note3) RoHS Compliant Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ372NZ minimizes b
FDZ372NZ Datasheet
