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FDZ371PZ - Thin WL-CSP MOSFET

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on).

Key Features

  • Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A.
  • Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A.
  • Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A.
  • Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A.
  • Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2 x 2 BGA.
  • Ultra-thin package: less than 0.4 mm height when mounted to PCB.
  • HBM ESD protection level >4.4kV typical (Note 3).
  • RoHS Compliant ® tm General Descr.

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Full PDF Text Transcription for FDZ371PZ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDZ371PZ. For precise diagrams, and layout, please refer to the original PDF.

FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET July 2009 FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mΩ Featur...

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V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mΩ Features „ Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A „ Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A „ Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A „ Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A „ Occupies only 1.0 mm2 of PCB area.Less than 30% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.4 mm height when mounted to PCB „ HBM ESD protection level >4.4kV typical (Note 3) „ RoHS Compliant ® tm General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging p

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