FDV301N
Description
This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
June 2009
Features
25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V. Gate-Source Zener for ESD ruggedness. >6k V Human Body Model Replace multiple NPN digital transistors with one DMOS FET.
SOT-23 Mark:301
Super SOTTM-6
Super SOTTM-8
SO-8
SOT-223
SOIC-16
INVERTER APPLICATION
Vcc
IN G S GND
Absolute Maximum Ratings TA = 25o C...
