FDV301N - N-Channel Digital FET

Product Overview

Fairchild Semiconductor

Part number	FDV301N
Manufacturer	Fairchild Semiconductor
File Size	200.99 KB
Description	N-Channel Digital FET
Datasheet	FDV301N Datasheet
Additional preview pages of the FDV301N datasheet.

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET. SOT-23 Mark:301 SuperSOTTM-6 SuperSOTTM-8 SO-8 D GS SOT-223 SOIC-16.

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Published: Mar 30, 2005 |