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FDS8690 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A.
  • Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A.
  • High performance trench technology for extremely low rDS(on) and fast switching.
  • Very low gate charge.
  • High power and current handling capability.
  • 100% RG tested.
  • RoHS Compliant LE A REE I DF.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8690 N-Channel PowerTrench® MOSFET January 2006 FDS8690 N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features „ Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A „ Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A „ High performance trench technology for extremely low rDS(on) and fast switching „ Very low gate charge „ High power and current handling capability „ 100% RG tested „ RoHS Compliant LE A REE I DF Applications „ Notebook CPU power supply „ Synchronous rectifier M ENTATIO LE N MP www.DataSheet4U.