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FDS86540 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod

Key Features

  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A.
  • High performance trench technologh for extremely low rDS(on).
  • High power and current handing capability in a widely used surface mount package.
  • 100% UIL Tested.
  • RoHS Compliant May 2012 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS86540 N-Channel PowerTrench® MOSFET FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ Features „ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A „ High performance trench technologh for extremely low rDS(on) „ High power and current handing capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant May 2012 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.