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FDS7082N3 - 30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters.

Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies.

Key Features

  • 17.5 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • Low Qg and Rg for fast switching.
  • FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline. Bottom-side 5 Drain Contact 6 7 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Cont.

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Full PDF Text Transcription (Reference)

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FDS7082N3 February 2004 FDS7082N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters. Applications • Secondary side Synchronous rectifier • Synchronous Buck VRM and POL Converters Features • 17.5 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.