FDMC5614P Datasheet Text
FDMC5614P P-Channel PowerTrench® MOSFET
FDMC5614P P-Channel PowerTrench® MOSFET
-60V, -13.5A, 100mΩ
May 2014
Features
General Description
- Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A
- Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A
- Low gate charge
- Fast switching speed
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS pliant
Application
- Power management
- Load switch
- Battery protection
Top
Bottom
D5
Pin 1
S SG S
D6 D7
DD D D
D8
MLP 3.3x3.3
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS...
