FDD8896 Key Features
- rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
| Manufacturer | Part Number | Description |
|---|---|---|
| FDD8896 | N-Channel Power MOSFET | |
| FDD8896-F085 | N-Channel MOSFET |