FDD8896-F085 Key Features
- rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
- Qualified to AEC Q101
- RoHS pliant
- Part: FDD8896-F085
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 496.68 KB
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