CMP0417AA0-I
FEATURES
- Process Technology : Full CMOS
CMOS LPRAM
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
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- Organization : 256K x 16
- Power Supply Voltage : 2.7~3.3V
- Three state output and TTL patible
- Package Type : 48-FBGA-6.00x8.00 mm2
- Separated I/O power(VCCQ) & Core Power(VCC)
- Easy memory expansion with /CS1, CS2, and /OE features
- Automatic power-down when deselected
PRODUCT FAMILY
Operating Temperature Operating Voltage (V) Speed Min. Typ. Max. CMP0417AA0-F70I Industrial (-40~85’C) 2.7 3.0 3.3 70ns Typ. 1.5m A Power Dissipation ICC1 f = 1MHz Max. 3m A ICC2 f = fmax Typ. 12m A Max. 20m A ISB1 (CMOS Standby Current) Typ. 30u A Max. 70u A
Product Family
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
PIN DESCRIPTION
1 2
FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
A B C D E F G H
/LB...