Datasheet Details
| Part number | FKP6008 |
|---|---|
| Manufacturer | FETek |
| File Size | 604.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FKP6008 Datasheet
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| Part number | FKP6008 |
|---|---|
| Manufacturer | FETek |
| File Size | 604.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FKP6008 Datasheet
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The FKP6008 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKP6008 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKP6008 N-Ch 60V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 60V 90mΩ 14A TO220 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
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