Datasheet Details
| Part number | FKP6006 |
|---|---|
| Manufacturer | FETek |
| File Size | 435.90 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FKP6006 Datasheet
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| Part number | FKP6006 |
|---|---|
| Manufacturer | FETek |
| File Size | 435.90 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FKP6006 Datasheet
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The FKP6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKP6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO220 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 60 ±20 50 34 100 40 28 74 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology FKP6006 N-Ch 60V Fast Switching.
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