EMP19K03HPCS
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH-Q1 N-CH-Q2
BVDSS
30V
30V
RDSON (MAX.) 5.7mΩ 2.2mΩ
48A
90A
Dual N Channel MOSFET
UIS, Rg 100% Tested
Ro HS & Halogen Free & TSCA pliant
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNIT
Q1
Q2
Gate-Source Voltage
±20
±12
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TA= 25 °C(t≦10s) TA= 25 °C(Steady-State) TC = 100 °C
Avalanche Current Avalanche Energy Repetitive Avalanche Energy2
L = 0.1m H, RG=25Ω L = 0.05m H
180 m J
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to...
