EMP19K03HPC
Description
:
Q1
Q2
BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V
30V 6.6mΩ 8.8mΩ
30V 2.4mΩ 3.4mΩ
ID @TC=25℃
62A
171A
ID @TA=25℃
20A
38A
Dual N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant
- ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Q1
Q2
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
L = 0.1m H L = 0.05m H
±20
±20
Power Dissipation Power Dissipation
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
- 100% UIS testing in condition of VD=25V, L=0.1m H, VG=10V, IL=21A,RG=25Ω,Rated VDS=30V N-CH_Q1
- 100% UIS testing...
