EMB14P03V Datasheet | Excelliance MOS

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V 14mΩ RDSON (MAX.)@VGS=-4.5V 22mΩ ID @TC=25℃ -20A P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.5m H, IAS=-19A, RG=25Ω L = 0.25m H Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RJC Junction-to-Ambient3...