• Part: EMB14P03G
  • Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 343.87 KB
Download EMB14P03G Datasheet PDF
Excelliance MOS
EMB14P03G
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 14 mΩ -12A P Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C -12 TA = 100 °C -9 -48 Avalanche Current Avalanche Energy L = 0.1m H, IAS=-19A, RG=25Ω Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range IAS EAS PD Tj, Tstg -19 18 2.5 1 -55 to 150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM...