EMB09K03VP
Description
:
Q1
Q2
BVDSS
30V
30V
RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V
20.0mΩ 9.0mΩ 30.0mΩ 15.0mΩ
ID @TC=25℃
32.0A 49.0A
ID @TA=25℃
8.0A 13.0A
Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free
- ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1m H L = 0.05m H
Power Dissipation Power Dissipation
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
ID IDM IAS EAS EAR PD
PD Tj, Tstg
LIMITS
Q1
Q2
±20...
