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EMB09K03VP - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 20.0mΩ 9.0mΩ 30.0mΩ 15.0mΩ ID @TC=25℃ 32.0A 49.0A ID @TA=25℃ 8.0A 13.0A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAME

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Datasheet Details

Part number EMB09K03VP
Manufacturer Excelliance MOS
File Size 668.00 KB
Description Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB09K03VP Datasheet

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EMB09K03VP Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 20.0mΩ 9.0mΩ 30.0mΩ 15.0mΩ ID @TC=25℃ 32.0A 49.0A ID @TA=25℃ 8.0A 13.0A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.