EMB09K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB09K03HP
Manufacturer	Excelliance MOS
File Size	291.07 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB09K03HP Datasheet

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V D2 / S1 RDSON (MAX.) 15mΩ 9.5mΩ ID 12A 15A D1 EMB09K03HP UIS, Rg 100% Tested D1 D1 D1 PIN 1 (G1) Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Q1 Q2 Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 ±20 V 12 15 9.6 12 A 48 60 12 15 7.2 11.25 mJ 3.6 5.