• Part: EMB07N03V
  • Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 364.35 KB
Download EMB07N03V Datasheet PDF
Excelliance MOS
EMB07N03V
Description : N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ ID @TA=25℃ 7.0mΩ 9.0mΩ 59A 13A Single N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage ±20 TC = 25 °C Continuous Drain Current1 TC = 100 °C TA = 25 °C 39 13 TA = 70 °C Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 L = 0.1m H Repetitive Avalanche Energy2,4 L = 0.05m H Power Dissipation1 TC = 25 °C TC = 100 °C 46.3 18.5 Power Dissipation1 TA = 25 °C TA = 70...