EMB07N03HR
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
7mΩ
50A
N Channel MOSFET
UIS, Rg 100% Tested
Ro HS & Halogen Free & TSCA pliant
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
PIN1 SYMBOL
LIMITS
Gate-Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1m H, IAS=37.5A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05m H
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
50 20 -55 to 150
100% UIS testing in condition of VD=25V, L=0.1m H, VG=10V, IL=22A, Rated VDS=30V N-CH THERMAL RESISTANCE...
