EPA160B
Excelics
DATA SHEET
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- - +31.0d Bm TYPICAL OUTPUT POWER 5.5d B TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 40m A PER BIN RANGE
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High Efficiency Heterojunction Power FET
540 50 156
100 40
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1d B pression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=4.5m A
Chip Thickness: 75 ± 13 microns All Dimensions In Microns
MIN 29.0 9.0
TYP 31.0 31.0 10.5 5.5 45
UNIT d Bm d B %
290 320
480 500 -1.0
660 m A m S
-2.5
V V V o
Drain...
