EPA160A
Excelics
- -
- -
- -
- EPA160A/EPA160AV
..
DATA SHEET High Efficiency Heterojunction Power FET
+31.0d Bm TYPICAL OUTPUT POWER 8.5d B TYPICAL POWER GAIN FOR EPA160A AND 10.0d B FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA160AV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 40m A PER BIN RANGE
Chip Thickness: 75 ± 20 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN Output Power at 1d B pression P1d B Vds=8V, Ids=50% Idss Gain at 1d B pression G1d B Vds=8V, Ids=50% Idss Gain at 1d B pression PAE Idss Gm Vp BVgd BVgs Rth Vds=8V, Ids=50% Idss f=12GHz 290 320 45 480 500 -1.0 -11 -7 -15 -14 30 -2.5 660 f=12GHz f=18GHz f=12GHz f=18GHz 9.5 29.0
: Via Hole No Via Hole For EPA160A EPA160AV
MAX MIN 29.0 TYP 31.0 31.0 10.0 12.0 10.0 d B d Bm MAX UNIT
TYP 31.0 31.0 11.5 8.5
46 290 320 480 500 -1.0...
