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PTF10195 - 125 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor

Description

The 10195 is an internally matched 125

watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications.

This device operates at 53% efficiency with 13 dB of gain minimum.

Full gold metallization ensures excellent device lifetime and reliability.

INTERNALLY

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Datasheet Details

Part number PTF10195
Manufacturer Ericsson
File Size 328.96 KB
Description 125 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10195 Datasheet

Full PDF Text Transcription

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PTF 10195 125 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. • • INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 14 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability • • • Typical Power Output and Efficiency vs. Input Power 160 64 56 Power Output (Watts) 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Power Output Efficiency 40 Efficiency (%) 48 VDD = 28 V IDQ = 1.
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