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PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor
Description
The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
Output Power (Watts)
16 12 8 4 0 0 1 2 3 4
200 82
LOT COD E
VCC = 26 V ICQ = 70 mA f = 2.
PTB20082 Datasheet
