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PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
25 Watts, 1.6–1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power & Efficiency vs. Input Power
40 80
30
60
Output Power (Watts)
20
40
VCC = 26 V
10
ICQ = 125 mA f = 1.65 GHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.
PTB20080 Datasheet
