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PTB 20051 6 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor
Description
The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
6 Watts, 1.465–1.513 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
9.0
Output Power (Watts)
7.5 6.0 4.5 3.0 1.5 0.0 0 0.5 1 1.5 2
200 51
LOT COD E
VCC = 26 V ICQ = 40 mA f = 1.
PTB20051 Datasheet
