IRLML0060 - 60V N-Channel MOSFET

Key Features

Industry-standard pinout.
Compatible with existing Surface Mount Techniques.
compliant containing no lead, no bromide and no halogen.
Industrial qualification Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Deratin.

IRLML0060 60v n-channel mosfet by EVVOSEMI - Datasheet Preview

Datasheet Details

Part number	IRLML0060
Manufacturer	EVVOSEMI
File Size	830.89 KB
Description	60V N-Channel MOSFET
Datasheet	IRLML0060 Datasheet

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IRLML0060 Product summary VDS (V) 60 RDS(on) (mΩ) 92 at VGS = 10 V 116 at VGS = 4.5 V N-Channel 60 V (D-S) MOSFET SOT–23 Features • Industry-standard pinout • Compatible with existing Surface Mount Techniques • compliant containing no lead, no bromide and no halogen • Industrial qualification Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ, TSTG Junction and Storage Temperature Range Thermal Resistance Symbol RJA RJA Parameter e Junction-to-Ambient f Junction-to-Ambient (t<10s) 1.