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AO4840 - 60V Dual N-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % R g and UIS tested Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 7A < 19mΩ < 23mΩ Dual N-Channel 60 V (D-S) MOSFET D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1.

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Datasheet Details

Part number AO4840
Manufacturer EVVOSEMI
File Size 860.22 KB
Description 60V Dual N-Channel MOSFET
Datasheet download datasheet AO4840 Datasheet

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AO4840 Features • TrenchFET® power MOSFET • 100 % R g and UIS tested Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 7A < 19mΩ < 23mΩ Dual N-Channel 60 V (D-S) MOSFET D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 7 4 3.