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AO4807 - Dual P-Channel MOSFET

General Description

The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -30V ID = -6 A (VGS = -10V) RDS(ON) < 21mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) Dual P-Channel MOSFET D1 D2 G1 G2 S1 S2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6 -.

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Datasheet Details

Part number AO4807
Manufacturer EVVOSEMI
File Size 698.04 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet AO4807 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4807 General Description The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6 A (VGS = -10V) RDS(ON) < 21mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) Dual P-Channel MOSFET D1 D2 G1 G2 S1 S2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6 -5 -30 2 1.