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OT410T - NPN Silicon Phototransistor

Download the OT410T datasheet PDF (OT410D included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon phototransistor.

Features

  • a domed lens and the OT410T a flat window.
  • TO - 46 Package.
  • Hermetically Sealed Device ideal for hostile environments High Sensitivity.
  • Dimensions in mm Specifications: Operating Temperature Range -55°C to 125°C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OT410D_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number OT410T
Manufacturer Unknown Manufacturer
File Size 192.46 KB
Description NPN Silicon Phototransistor
Datasheet download datasheet OT410T Datasheet

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  • OT410D - NPN Silicon Phototransistor

Full PDF Text Transcription

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www.DataSheet4U.com NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window. • TO - 46 Package • Hermetically Sealed Device ideal for hostile environments High Sensitivity • Dimensions in mm Specifications: Operating Temperature Range -55°C to 125°C PARAMETERS Light Current H = 1mW/cm2 OT 410D(T)-1 OT 410D(T)-2 OT 410D(T)-3 Dark Current VCE = 10V, H = 0 Collector Emitter Voltage Emitter Collector Voltage Saturation Voltage IC = 1mA Angular Response Rise or Fall Time RL = 100Ω V CC = 10V OT 410D OT 410T OT 410D-1 OT 410D-6 SYMBOL MIN. 3 (1.
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