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NPN Silicon Phototransistor Type OT 410D and OT 410T
The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window.
• TO - 46 Package • Hermetically Sealed Device ideal for hostile
environments High Sensitivity
•
Dimensions in mm
Specifications:
Operating Temperature Range -55°C to 125°C
PARAMETERS Light Current H = 1mW/cm2 OT 410D(T)-1 OT 410D(T)-2 OT 410D(T)-3 Dark Current VCE = 10V, H = 0 Collector Emitter Voltage Emitter Collector Voltage Saturation Voltage IC = 1mA Angular Response Rise or Fall Time RL = 100Ω V CC = 10V OT 410D OT 410T OT 410D-1 OT 410D-6
SYMBOL MIN. 3 (1.
OT410D Datasheet