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NGA-689 - DC-5000 MHz / Cascadable GaAs HBT MMIC Amplifier

Description

Stanford Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.

Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz.

Features

  • • 11.7dB Gain, 18.9 dBm P1dB at 1950Mhz • Cascadable 50 ohm: 1.4:1 VSWR • Patented GaAs HBT Technology • Operates from Single Supply • Low Thermal Resistance Package • Unconditionally Stable.

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Datasheet Details

Part number NGA-689
Manufacturer Unknown Manufacturer
File Size 412.25 KB
Description DC-5000 MHz / Cascadable GaAs HBT MMIC Amplifier
Datasheet download datasheet NGA-689 Datasheet

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Full PDF Text Transcription

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Product Description Stanford Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Preliminary Preliminary NGA-689 DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier Small Signal Gain vs. Frequency 16 14 dB 12 10 8 6 0 2 4 Frequency GHz Product Features • 11.7dB Gain, 18.9 dBm P1dB at 1950Mhz • Cascadable 50 ohm: 1.
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