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NGA-386 - Cascadable GaAs HBT MMIC Amplifier

Description

Stanford Microdevices’ NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.

Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz.

Features

  • High Gain: 18.9dB at 1950Mhz.
  • Cascadable 50 ohm: 1.2:1 VSWR.
  • Patented GaAs HBT Technology.
  • Operates from Single Supply.
  • Low Thermal Resistance Package.
  • Unconditionally Stable.

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Datasheet Details

Part number NGA-386
Manufacturer Stanford Microdevices
File Size 427.05 KB
Description Cascadable GaAs HBT MMIC Amplifier
Datasheet download datasheet NGA-386 Datasheet

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www.DataSheet4U.com Preliminary Preliminary Product Description Stanford Microdevices’ NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. NGA-386 DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier Small Signal Gain vs. Frequency 25 20 15 dB 10 5 0 0 1 2 3 4 5 6 7 Product Features • High Gain: 18.9dB at 1950Mhz • Cascadable 50 ohm: 1.
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