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LB120A - TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

Description

Designed for use in high-voltage switching applications.

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Datasheet Details

Part number LB120A
Manufacturer Unknown Manufacturer
File Size 212.32 KB
Description TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
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DC COMPONENTS CO., LTD. R LB120A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in high-voltage switching applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Base Current (pulse) Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC IB IB PD PD TJ TSTG Rating 600 400 6 100 200 20 40 0.8 7 +150 -55 to +150 Unit V V V mA mA mA mA W W o o .500 Min (12.70) .022(0.56) .014(0.36) .
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