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LB120A3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=400V (min. ).
  • Pb-free package Symbol LB120A3 Outline TO-92 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC PD RθJA.

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Datasheet Details

Part number LB120A3
Manufacturer CYStech Electronics
File Size 181.55 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet LB120A3 Datasheet

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C618A3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/3 LB120A3 Features • Low collector saturation voltage • High breakdown voltage, VCEO=400V (min.) • Pb-free package Symbol LB120A3 Outline TO-92 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Limits 600 400 9 0.5 1 125 150 -55~+150 Unit V V V A W °C/W °C °C LB120A3 CYStek Product Specification http://www.Datasheet4U.
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