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2N6367 - NPN SILICON RF POWER TRANSISTOR

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Part number 2N6367
Manufacturer Unknown Manufacturer
File Size 308.39 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet 2N6367 Datasheet

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2N6367 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR · . . designed primarily for driver applications in 12.5 volt single~ideband amplifiers from 2.0 to 30 MHz. • Optimized for Operation from a 12:5 Volt Supply • Power Output@ 12.5 Vdc, 30 MHz -:-H.O W (PEP) • Intermodulation Distortion at Ra.ted Powe, Output- IMD .= -30 dB (Max) 9 W (PEP) - 30 MHz RF POWER ,TRANSISTOR NPN SILICON "MAXIMUM RATINGS ,. Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous' Total Device Dissipation @ T C - 2SoC Derate above 2SoC Storage Temperature Range' *Indicates JEDEC Registered Da~a. Symbol VCEO VCBO VEBO IC Po T stg Value 18 36 4.0 2.0 20 0.114 -65 to +200 Unit Vdc Vdc Vdc Ado Watts W/oC °c , TYPICAL DRIVER.
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