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2N6366 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
. designed for operation in driver and predriver stages for high power linear amplifiers, 2.0 to 30 MHz. • Optimized for Operation from a 12.5 Volt Supply • Power Gain @ 2.5 W (PEP) = 17 dB (Min) • I ntermodulation Distortion at Rated Power Output
IMD = -35 dB (Max)
2.5 W (PEP)-30 MHz
RFPOWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating * COllector-Emitter Voltage * Collector-Base Voltage * Emitter-Base Voltage * Collector Current - Continuous *Total Device Dissipation@Tc = 25°C
Derate above 25°C • Storage Temperature Range
Maximum Stud Torque (11
Symbol VCEO VCBO VEBO
IC
Po
T stg -
Value 18 36 4.0 1.0 10
57.2 -65 to +200
2.1
Unit Vdc Vdc Vdc Adc Watts mW/oC
°c
inAb.
-Indicates JEDEC Registered Data.
2N6366 Datasheet
