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M14D1G1664A Datasheet 8M x 16 Bit x 8 Banks DDR II SDRAM

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

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M14D1G1664A 8m x 16 bit x 8 banks ddr ii sdram by ESMT (Elite Semiconductor Microelectronics Technology) - Datasheet Preview

Datasheet Details

Part number	M14D1G1664A
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	1.98 MB
Description	8M x 16 Bit x 8 Banks DDR II SDRAM
Datasheet	M14D1G1664A Datasheet

Overview

ESMT DDR II SDRAM M14D1G1664A (2P) 8M x 16 Bit x 8 Banks DDR II.

Key Features

JEDEC Standard.
VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V.
Internal pipelined double-data-rate architecture; two data access per clock cycle.
Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
On-chip DLL.
Differential clock inputs (CLK and CLK ).
DLL aligns DQ and DQS transition with CLK transition.
8 bank operation.
CAS Latency : 3, 4, 5, 6, 7.
Additive Latency: 0, 1, 2, 3, 4, 5, 6.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number	Description
M14D1G1664A-1.5BG2P	8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G1664A-1.5BG2S	DDR-II SDRAM
M14D1G1664A-1.6BG2P	8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G1664A-1.6BG2S	DDR-II SDRAM
M14D1G1664A-1.8BG2P	8M x 16 Bit x 8 Banks DDR II SDRAM
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M14D1G1664A-2.5BG2P	8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G1664A-2.5BG2S	DDR-II SDRAM
M14D1G8128A-1.5BG2P	16M x 8 Bit x 8 Banks DDR II SDRAM
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