Reverse voltage VR > 55V.
Operational beyond the -60°C to +230°C temperature range.
o XTR1N0415: IF=280mA per diode.
o XTR1N0450: IF=800mA per diode.
Forward voltage @ 85°C, IF=1mA: o XTR1N0415: VF=622mV per diode.
| Part number | XTR1N0400 |
|---|---|
| Manufacturer | EASii |
| File Size | 696.83 KB |
| Description | High Temperature 40V Diode |
| Datasheet |
 XTR1N0400 Datasheet
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| Part Number | Description |
|---|---|
| XTR1N0800 | High Temperature 80V Diode |
| XTR1K1210 | High Temperature 10A 1200V SiC Schottky Diode |
| XTR20410 | High Temperature 35V N-Channel Power MOSFET |
| XTR20810 | High Temperature 80V Low-Side N-Channel Power MOSFET |
| XTR25010 | High Temperature Power Gate Driver |
| XTR25020 | High Temperature Power Gate Driver |
| XTR25410 | High Temperature 35V Floating Driver |
| XTR26020 | High Temperature Isolated Intelligent Gate Driver |
| XTR2N0300 | High Temperature 30V P-Channel Power MOSFET |
| XTR2N0307 | High Temperature 30V P-Channel Small Signal MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
